University of Wisconsin–Madison

Seeds

Seed – Microstructure Inhomogeneity in Glassy Electrolytes: Pathways to Enhanced Ion Mobility

Funding Period: September 1, 2024 – August 31, 2026

Faculty

Loading…

Students and Postdocs

Loading…

Seed – Uncovering the Molecular Mechanism of Coupling Between Ion and Polymer Segmental Mobility in Glassy Polyelectrolyte Blends

Funding Period: September 1, 2024 – August 31, 2026

Faculty

Loading…

Students and Postdocs

Loading…

Seed – Illuminating Redox Ion Flux and Solvation in Functional Materials

Funding Period: September 1, 2024 – August 31, 2026

Faculty

Loading…

Students and Postdocs

Loading…

Seed – Novel Electron Solids in Two-dimensional Materials

Funding Period: September 1, 2024 – August 31, 2026

Faculty

Loading…

Students and Postdocs

Loading…

Seed News

  • (2026) Tuning Polymer Structure in Polymer Blend Electrolytes

    (2026) Tuning Polymer Structure in Polymer Blend Electrolytes

    Wisconsin MRSEC researchers investigated the effect of polymer molecular structure on the blend properties and ion transport capabilities. Increasing the side chain length of one polymer improved solvation of Li ions and…

  • (2025) Evolution of Catalyst Material Nanostructures

    (2025) Evolution of Catalyst Material Nanostructures

    Wisconsin MRSEC researchers investigated how metal ions of palladium and copper, stabilized in zeolites, rearrange when exposed to high temperatures or reactive environments. They used cutting-edge X-ray characterization to ‘see’ structural changes…

  • (2025) Quantum Mechanics of 2D Electron Solids

    (2025) Quantum Mechanics of 2D Electron Solids

    Researchers in the Wisconsin MRSEC have shown that bilayer electron crystals exhibit a variety of magnetic states depending on the distance between the two layers and the number of electrons in each…

  • (2024) Integration of High-k STO with Novel GaN High Voltage Transistors

    (2024) Integration of High-k STO with Novel GaN High Voltage Transistors

    Wisconsin MRSEC researchers have designed and fabricated a new dual-gate 1200 V GaN based bidirectional transistor with good performance. However, performance is limited by failure of the electrically insulating layer, which is…