(2013) IRG 1: Self-Catalytic Growth of GaAs1-yBiy using Chemical Vapor Deposition
By: S.E. Babcock, T.F. Kuech, L. J. Mawst The presence of chemical species on a surface can radically change the surface chemical kinetics associated with atom placement and crystal growth. Recently, IRG1 researchers at the Wisconsin MRSEC completed a comparative study of the effect on epilayer composition and structural properties of reactant sequencing during the metalorganic …